Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs
نویسندگان
چکیده
a Department of Information Engineering, University of Padova, Via Gradenigo 6/B, I-35135 Padova, Italy b Department of Engineering “Enzo Ferrari”, University of Modena and Reggio Emilia, Italy c Selex E.S., a Finmeccanica Company, via Tiburtina, km 12.400, 00131 Rome, Italy d 3-5 Lab/Thales Research & Technology, Route de Nozay, 91460 Marcoussis, France e Department of Physics and Astronomy, University of Padova, via Marzolo 8, 35131 Padova, Italy
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عنوان ژورنال:
- Microelectronics Reliability
دوره 55 شماره
صفحات -
تاریخ انتشار 2015